High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs...

IEEE Electron Device Letters 2004 / 01 Vol. 25; Iss. 1

High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs Without Surface Passivation

Shen, L., Coffie, R., Buttari, D., Heikman, S., Chakraborty, A., Chini, A., Keller, S., DenBaars, S.P., Mishra, U.K.
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Volume:
25
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2003.821673
Date:
January, 2004
File:
PDF, 134 KB
english, 2004
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