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Effect of Annealing on the Properties of Indium−Tin−Oxynitride Films as Ohmic Contacts for GaN-Based Optoelectronic Devices
Himmerlich, Marcel, Koufaki, Maria, Ecke, Gernot, Mauder, Christof, Cimalla, Volker, Schaefer, Juergen A., Kondilis, Antonis, Pelekanos, Nikos T., Modreanu, Mircea, Krischok, Stefan, Aperathitis, EliaVolume:
1
Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/am900138f
Date:
July, 2009
File:
PDF, 1.07 MB
english, 2009