Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application
Kobayashi, Masaharu, Kinoshita, Atsuhiro, Saraswat, Krishna, Wong, H.-S. Philip, Nishi, YoshioVolume:
105
Year:
2009
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3065990
File:
PDF, 1.05 MB
english, 2009