High-Voltage and Low-Leakage-Current Gate Recessed...

IEEE Electron Device Letters 2014 / 02 Vol. 35; Iss. 2

High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-${\rm SiN}_{x}$/RF-Sputtered-${\rm HfO}_{2}$

Choi, Woojin, Seok, Ogyun, Ryu, Hojin, Cha, Ho-Young, Seo, Kwang-Seok
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2293579
Date:
February, 2014
File:
PDF, 696 KB
english, 2014
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