![](/img/cover-not-exists.png)
[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - 70 nm MOSFET with ultra-shallow, abrupt, and super-doped S/D extension implemented by laser thermal process (LTP)
Bin Yu,, Yun Wang,, Haihong Wang,, Qi Xiang,, Riccobene, C., Talwar, S., Ming-Ren Lin,Year:
1999
Language:
english
DOI:
10.1109/IEDM.1999.824204
File:
PDF, 344 KB
english, 1999