An improved model for boron diffusion and activation in...

AIChE Journal 2010 Vol. 56; Iss. 2

An improved model for boron diffusion and activation in silicon

Charlotte T. M. Kwok, Richard D. Braatz, Silke Paul, Wilfried Lerch, Edmund G. Seebauer
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Volume:
56
Year:
2010
Language:
english
Pages:
1
DOI:
10.1002/aic.11984
File:
PDF, 207 KB
english, 2010
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