High Brightness Violet InGaN/GaN Light Emitting Diodes on...

Japanese Journal of Applied Physics 2007 / 2 Vol. 46; Iss. No. 7

High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar $(10\bar{1}\bar{1})$ Bulk GaN Substrates

Tyagi, Anurag, Zhong, Hong, Fellows, Natalie N., Iza, Michael, Speck, James S., DenBaars, Steven P., Nakamura, Shuji
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Volume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.L129
Date:
February, 2007
File:
PDF, 124 KB
english, 2007
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