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Effect of additional hydrochloric acid flow on the growth of non-polar a-plane GaN layers on r-plane sapphire by hydride vapor-phase epitaxy
Lee, Moonsang, Mikulik, Dmitry, Park, Sungsoo, Im, Kyuhyun, Cho, Seong-Ho, Ko, Dongsu, Kim, Un Jeong, Hwang, Sungwoo, Yoon, EuijoonVolume:
404
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2014.07.002
Date:
October, 2014
File:
PDF, 2.24 MB
english, 2014