Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕drain stressors
K. Ang, K. Chui, V. Bliznetsov, C. Tung, A. Du, N. Balasubramanian, G. Samudra, M. F. Li, Y. YeoVolume:
86
Year:
2005
Language:
english
DOI:
10.1063/1.1871351
File:
PDF, 574 KB
english, 2005