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Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiC
Jenny, J. R., Skowronski, J., Mitchel, W. C., Hobgood, H. M., Glass, R. C., Augustine, G., Hopkins, R. H.Volume:
68
Year:
1996
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.115640
File:
PDF, 268 KB
english, 1996