Mechanisms of Enhanced Orbital Dia- and Paramagnetism:...

Physical Review Letters 2012 / 6 Vol. 108; Iss. 24

Mechanisms of Enhanced Orbital Dia- and Paramagnetism: Application to the Rashba Semiconductor BiTeI

Schober, G. A. H., Murakawa, H., Bahramy, M. S., Arita, R., Kaneko, Y., Tokura, Y., Nagaosa, N.
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Volume:
108
Language:
english
Journal:
Physical Review Letters
DOI:
10.1103/PhysRevLett.108.247208
Date:
June, 2012
File:
PDF, 260 KB
english, 2012
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