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[IEEE 2009 IEEE International Reliability Physics Symposium - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Critical gate voltage and digital breakdown: Extending post-breakdown reliability margin in ultrathin gate dielectric with thickness ≪ 1.6 nm
Lo, V. L., Pey, K. L., Ranjan, R., Tung, C. H., Shih, J. R., Wu, KennethYear:
2009
Language:
english
DOI:
10.1109/IRPS.2009.5173332
File:
PDF, 279 KB
english, 2009