Impact of oxide thickness on SEGR failure in vertical power...

IEEE Transactions on Nuclear Science 1995 / Dec. Vol. 42; Iss. 6

Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression

Titus, J.L., Wheatley, C.F., Burton, D.I., Mouret, I., Allenspach, M., Brews, J., Schrimpf, R., Galloway, K., Pease, R.L.
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Volume:
42
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.489236
Date:
January, 1995
File:
PDF, 598 KB
english, 1995
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