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Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs
Dachs, C., Roubaud, F., Palau, J.-M., Bruguier, G., Gasiot, J., Tastet, P.Volume:
41
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.340558
Date:
December, 1994
File:
PDF, 452 KB
english, 1994