Evidence of the ion's impact position effect on SEB in...

IEEE Transactions on Nuclear Science 1994 / 12 Vol. 41; Iss. 6

Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs

Dachs, C., Roubaud, F., Palau, J.-M., Bruguier, G., Gasiot, J., Tastet, P.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
41
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.340558
Date:
December, 1994
File:
PDF, 452 KB
english, 1994
Conversion to is in progress
Conversion to is failed