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La2O3 gate insulators prepared by atomic layer deposition: Optimal growth conditions and MgO/La2O3 stacks for improved metal-oxide-semiconductor characteristics
Suzuki, Takuya, Kouda, Miyuki, Ahmet, Parhat, Iwai, Hiroshi, Kakushima, Kuniyuki, Yasuda, TetsujiVolume:
30
Year:
2012
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.4737618
File:
PDF, 2.85 MB
english, 2012