SiGe p-n-p HBTs With 265-GHz fmax, 175-GHz fT, and 3.65-ps...

IEEE Electron Device Letters 2014 / 8 Vol. 35; Iss. 8

SiGe p-n-p HBTs With 265-GHz fmax, 175-GHz fT, and 3.65-ps Gate Delay

Heinemann, Bernd, Rucker, Holger, Barth, Rainer, Drews, Jurgen, Fursenko, Oksana, Grabolla, Thomas, Kurps, Rainer, Marschmeyer, Steffen, Scheit, Alexander, Schmidt, Detlef, Trusch, Andreas, Wolansky,
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2014.2330659
Date:
August, 2014
File:
PDF, 1.01 MB
english, 2014
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