Atomic Layer Deposited Gallium Oxide Buffer Layer Enables...

Advanced Materials 2014 / 07 Vol. 26; Iss. 27

Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open-Circuit Voltage in Cuprous Oxide Solar Cells

Lee, Yun Seog, Chua, Danny, Brandt, Riley E., Siah, Sin Cheng, Li, Jian V., Mailoa, Jonathan P., Lee, Sang Woon, Gordon, Roy G., Buonassisi, Tonio
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Volume:
26
Language:
english
Journal:
Advanced Materials
DOI:
10.1002/adma.201401054
Date:
July, 2014
File:
PDF, 1.06 MB
english, 2014
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