600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With...

IEEE Electron Device Letters 2013 / 11 Vol. 34; Iss. 11

600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse

Tang, Zhikai, Jiang, Qimeng, Lu, Yunyou, Huang, Sen, Yang, Shu, Tang, Xi, Chen, Kevin J.
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2279846
Date:
November, 2013
File:
PDF, 646 KB
english, 2013
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