The Influence of In x...

Crystal Growth & Design 2007 / 12 Vol. 7; Iss. 12

The Influence of In x Ga 1– x As and GaAs 1– y P y Layers Surrounding the AlAs Release Layer in the Epitaxial Lift-Off Process

van Niftrik, Antonius T. J., Schermer, John J., Bauhuis, Gerhardus J., van Deelen, Joop, Mulder, Peter, Larsen, Poul K.
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Volume:
7
Language:
english
Journal:
Crystal Growth & Design
DOI:
10.1021/cg0700061
Date:
December, 2007
File:
PDF, 2.97 MB
english, 2007
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