Growth of strained InGaSb quantum wells for p-FET on Si:...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2014 / 09 Vol. 32; Iss. 5

Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties

Madisetti, Shailesh, Tokranov, Vadim, Greene, Andrew, Yakimov, Michael, Hirayama, Makoto, Oktyabrsky, Serge, Bentley, Steven, Jacob, Ajey P.
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Volume:
32
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4892797
Date:
September, 2014
File:
PDF, 3.20 MB
english, 2014
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