[IEEE 2009 IEEE International Electron Devices Meeting...

  • Main
  • [IEEE 2009 IEEE International Electron...

[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate

Uemoto, Yasuhiro, Morita, Tatsuo, Ikoshi, Ayanori, Umeda, Hidekazu, Matsuo, Hisayoshi, Shimizu, Jun, Hikita, Masahiro, Yanagihara, Manabu, Ueda, Tetsuzo, Tanaka, Tsuyoshi, Ueda, Daisuke
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2009
Language:
english
DOI:
10.1109/IEDM.2009.5424397
File:
PDF, 384 KB
english, 2009
Conversion to is in progress
Conversion to is failed