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[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate
Uemoto, Yasuhiro, Morita, Tatsuo, Ikoshi, Ayanori, Umeda, Hidekazu, Matsuo, Hisayoshi, Shimizu, Jun, Hikita, Masahiro, Yanagihara, Manabu, Ueda, Tetsuzo, Tanaka, Tsuyoshi, Ueda, DaisukeYear:
2009
Language:
english
DOI:
10.1109/IEDM.2009.5424397
File:
PDF, 384 KB
english, 2009