Study of Impact of Access Resistance on High-Frequency...

IEEE Electron Device Letters 2006 / 11 Vol. 27; Iss. 11

Study of Impact of Access Resistance on High-Frequency Performance of AlGaN/GaN HEMTs by Measurements at Low Temperatures

Nidhi,, Palacios, T., Chakraborty, A., Keller, S., Mishra, U.K.
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Volume:
27
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2006.884720
Date:
November, 2006
File:
PDF, 103 KB
english, 2006
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