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Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130nm technology p-channel transistors
Rott, Gunnar Andreas, Rott, Karina, Reisinger, Hans, Gustin, Wolfgang, Grasser, TiborVolume:
54
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2014.07.040
Date:
September, 2014
File:
PDF, 2.01 MB
english, 2014