Atomic Layer Deposition of a High- k Dielectric on MoS 2 Using Trimethylaluminum and Ozone
Cheng, Lanxia, Qin, Xiaoye, Lucero, Antonio T., Azcatl, Angelica, Huang, Jie, Wallace, Robert M., Cho, Kyeongjae, Kim, JiyoungVolume:
6
Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/am5032105
Date:
August, 2014
File:
PDF, 2.70 MB
english, 2014