Low Power and Improved Switching Properties of...

Japanese Journal of Applied Physics 2013 / 04 Vol. 52; Iss. 4S

Low Power and Improved Switching Properties of Selector-Less Ta 2 O 5 Based Resistive Random Access Memory Using Ti-Rich TiN Electrode

Kim, Beomyong, Kim, Wangee, Kim, Hyojune, Jung, Kyooho, Park, Wooyoung, Seo, Bomin, Joo, Moonsig, Lee, Keejeung, Hong, Kwon, Park, Sungki
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.04CD05
Date:
April, 2013
File:
PDF, 1.26 MB
english, 2013
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