Dislocation Analysis of 4H-SiC Using KOH Low Temperature...

Materials Science Forum 2014 / 2 Vol. 778-780

Dislocation Analysis of 4H-SiC Using KOH Low Temperature Etching

Sato, Takahiro, Suzuki, Yuya, Ito, Hiroyuki, Isshiki, Toshiyuki, Fukui, Munetoshi
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Volume:
778-780
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.778-780.358
Date:
February, 2014
File:
PDF, 2.11 MB
english, 2014
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