Behavior of a rectifying junction at the interface between...

Journal of Applied Physics 1994 Vol. 75; Iss. 1

Behavior of a rectifying junction at the interface between porous silicon and its substrate

Pulsford, N. J., Rikken, G. L. J. A., Kessener, Y. A. R. R., Lous, E. J., Venhuizen, A. H. J.
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Volume:
75
Year:
1994
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.355802
File:
PDF, 538 KB
english, 1994
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