Characterization of Si volume- and delta-doped InGaAs grown...

Characterization of Si volume- and delta-doped InGaAs grown by molecular beam epitaxy

Y. Fedoryshyn, M. Beck, P. Kaspar, H. Jaeckel
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Volume:
107
Year:
2010
Language:
english
DOI:
10.1063/1.3388077
File:
PDF, 410 KB
english, 2010
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