![](/img/cover-not-exists.png)
Characterization of Si volume- and delta-doped InGaAs grown by molecular beam epitaxy
Y. Fedoryshyn, M. Beck, P. Kaspar, H. JaeckelVolume:
107
Year:
2010
Language:
english
DOI:
10.1063/1.3388077
File:
PDF, 410 KB
english, 2010