Semiconductor detector based on 4H-SiC and analysis of its...

Journal of Instrumentation 2014 / 05 Vol. 9; Iss. 5

Semiconductor detector based on 4H-SiC and analysis of its active region thickness

Zat'ko, B, Sedlačková, K, Dubecký, F, Šagátová, A, Boháček, P, Nečas, V
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Volume:
9
Language:
english
Journal:
Journal of Instrumentation
DOI:
10.1088/1748-0221/9/05/C05041
Date:
May, 2014
File:
PDF, 753 KB
english, 2014
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