Growth of 3C-SiC on Si(100) by Low Pressure Chemical Vapor...

Crystal Growth & Design 2009 / 06 Vol. 9; Iss. 6

Growth of 3C-SiC on Si(100) by Low Pressure Chemical Vapor Deposition Using a Modified Four-Step Process

Chen, W.-Y., Chen, C. C., Hwang, J., Huang, C.-F.
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Volume:
9
Language:
english
Journal:
Crystal Growth & Design
DOI:
10.1021/cg801041w
Date:
June, 2009
File:
PDF, 3.03 MB
english, 2009
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