Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
2013 Vol. 31; Iss. 5
Highly thermally stable in situ SiNX passivation AlGaN/GaN enhancement-mode high electron mobility transistors using TiW refractory gate structure
Chiu, Hsien-Chin, Chen, Chao-Hung, Yang, Chih-Wei, Kao, Hsuan-Ling, Huang, Fan-Hsiu, Peng, Sheng-Wen, Lin, Heng-KuangVolume:
31
Year:
2013
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4821195
File:
PDF, 1.03 MB
english, 2013