Normally-Off AlGaN/GaN High Electron Mobility Transistors...

Japanese Journal of Applied Physics 2013 / 11 Vol. 52; Iss. 11R

Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers

Zhang, Kai, Mi, Minhan, Chen, Yonghe, Cao, Mengyi, Wang, Chong, Ma, Xiaohua, Zhang, Jincheng, Hao, Yue
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.111001
Date:
November, 2013
File:
PDF, 727 KB
english, 2013
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