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Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to
Feneberg, Martin, Osterburg, Sarah, Lange, Karsten, Lidig, Christian, Garke, Bernd, Goldhahn, Rüdiger, Richter, Eberhard, Netzel, Carsten, Neumann, Maciej D., Esser, Norbert, Fritze, Stephanie, Witte,Volume:
90
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.90.075203
Date:
August, 2014
File:
PDF, 844 KB
english, 2014