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Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentration
Baek, Chang-Ki, Park, Sooyoung, Ko, Myung-Dong, Rim, Taiuk, Choi, Seongwook, Jeong, Yoon-HaVolume:
112
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4745858
File:
PDF, 1.60 MB
english, 2012