Novel Multistate Quantum Dot Gate FETs Using SiO2and Lattice-Matched ZnS-ZnMgS-ZnS as Gate Insulators
M. Lingalugari,K. Baskar,P.-Y. Chan,P. Dufilie…Volume:
42
Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-013-2696-7
Date:
November, 2013
File:
PDF, 926 KB
english, 2013