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Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 × 1 to GeH 4
Liu, Chie-Sheng, Chou, Li-Wei, Hong, Lu-Sheng, Jiang, Jyh-ChiangVolume:
130
Language:
english
Journal:
Journal of the American Chemical Society
DOI:
10.1021/ja710802s
Date:
April, 2008
File:
PDF, 716 KB
english, 2008