Transport properties of SiO 2 /AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistors on SiC substrate
Lachab, M, Sultana, M, Fareed, Q, Husna, F, Adivarahan, V, Khan, AVolume:
47
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/47/13/135108
Date:
April, 2014
File:
PDF, 586 KB
english, 2014