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Temperature dependence of ballistic mobility in a metamorphic InGaAs/InAlAs high electron mobility transistor
Lee, Jongkyong, Gang, Suhyun, Jo, Yongcheol, Kim, Jongmin, Woo, Hyeonseok, Han, Jaeseok, Kim, Hyungsang, Im, HyunsikVolume:
116
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4891730
Date:
July, 2014
File:
PDF, 1.17 MB
english, 2014