Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN...

IEEE Electron Device Letters 2012 / 01 Vol. 33; Iss. 1

Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $g_{m}$, and 0.66-$\Omega\cdot \hbox{mm}$$R_{\rm on}$

Singisetti, Uttam, Wong, Man Hoi, Speck, James S., Mishra, Umesh K.
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Volume:
33
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2011.2170656
Date:
January, 2012
File:
PDF, 366 KB
english, 2012
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