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High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons
Azize, Mohamed, Hsu, Allen L., Saadat, Omair I., Smith, Matthew, Gao, Xiang, Guo, Shiping, Gradecak, Silvija, Palacios, TomásVolume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2011.2170149
Date:
December, 2011
File:
PDF, 290 KB
english, 2011