[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Charge-injection phase change memory with high-quality GeTe/Sb2Te3 superlattice featuring 70-μA RESET, 10-ns SET and 100M endurance cycles operations
Ohyanagi, T., Takaura, N., Tai, M., Kitamura, M., Kinoshita, M., Akita, K., Morikawa, T., Kato, S., Araidai, M., Kamiya, K., Yamamoto, T., Shiraishi, K.Year:
2013
Language:
english
DOI:
10.1109/IEDM.2013.6724725
File:
PDF, 1.49 MB
english, 2013