Structural Properties of GaN Buffer Layers on 4H-SiC(0001)...

Japanese Journal of Applied Physics 2004 / 11 Vol. 43; Iss. No. 12A

Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors

Waltereit, Patrick, Poblenz, Christiane, Rajan, Siddharth, Wu, Feng, Mishra, Umesh K., Speck, James S.
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Volume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.43.L1520
Date:
November, 2004
File:
PDF, 154 KB
english, 2004
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