5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing
Zhang, Baoshun, Tan, Shuxin, Xu, Jicheng, Dong, Zhihua, Yu, Guohao, Cai, Yong, Xue, Lu, Chen, Hongwei, Hou, Keyu, Zhao, Desheng, Wang, Yue, Liu, Shenghou, Chen, Kevin J.Volume:
49
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el.2012.3153
Date:
January, 2013
File:
PDF, 260 KB
english, 2013