A complete analytic surface potential-based core model for...

Molecular Simulation 2009 / 05 Vol. 35; Iss. 6

A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs

He, Jin, Zhang, Lining, Zhang, Jian, Ma, Chenyue, Liu, Feilong, Chan, Mansun
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Volume:
35
Language:
english
Journal:
Molecular Simulation
DOI:
10.1080/08927020802706995
Date:
May, 2009
File:
PDF, 442 KB
english, 2009
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