Structure and location of misfit dislocations in InGaAs...

Applied Physics Letters 1993 Vol. 62; Iss. 13

Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates

Y. Chen, N. D. Zakharov, P. Werner, Z. Liliental-weber, J. Washburn, J. F. Klem, J. Y. Tsao
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Volume:
62
Year:
1993
Language:
english
DOI:
10.1063/1.108632
File:
PDF, 705 KB
english, 1993
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