The Progress of YMnO 3 /Y 2 O 3 /Si System for a Ferroelectric Gate Field Effect Transistor
Fujimura, Norifumi, Ito, Daisuke, Ito, TaichroVolume:
271
Language:
english
Journal:
Ferroelectrics
DOI:
10.1080/00150190211525
Date:
January, 2002
File:
PDF, 226 KB
english, 2002