[IEEE 2005 IEEE International Reliability Physics...

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[IEEE 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - San Jose, CA, USA (April 17-21, 2005)] 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - A voltage acceleration lifetime model to predict post-cycling LTDR characteristics of split-gate flash memories

Ling-Chang Hu,, An-Chi Kang,, Wu, T.I., Chen, E., Shih, J.R., Chin, H.W., Yao-Feng Lin,, Wu, K., Ya-Chin King,
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Year:
2005
Language:
english
DOI:
10.1109/RELPHY.2005.1493194
File:
PDF, 371 KB
english, 2005
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