[IEEE 2010 International Workshop on Junction Technology (IWJT) - Shanghai, China (2010.05.10-2010.05.11)] 2010 International Workshop on Junction Technology Extended Abstracts - Er inserted Ni silicide metal source/drain for Schottky MOSFETs
Ahmet, Parhat, Hosoda, Wataru, Noguchi, Kohei, Ohishi, Yoshihisa, Kakushima, Kuniyuki, Tsutsui, Kazuo, Iwai, HiroshiYear:
2010
Language:
english
DOI:
10.1109/IWJT.2010.5474989
File:
PDF, 767 KB
english, 2010