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[IEEE Proceedings of International Reliability Physics Symposium - Dallas, TX, USA (1996.04.30-1996.05.2)] Proceedings of International Reliability Physics Symposium RELPHY-96 - Ultra thin oxide reliability: effects of gate doping concentration and poly-Si/SiO/sub 2/ interface stress relaxation
Wristers, D., Wang, H.H., Wolf, I.D., Han, L.K., Kwong, D.L., Fulford, J.Year:
1996
Language:
english
DOI:
10.1109/RELPHY.1996.492064
File:
PDF, 754 KB
english, 1996