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A 3-D Statistical Simulation Study of Mobility Fluctuations in MOSFET Induced by Discrete Trapped Charges in SiO $_2$ Layer
S. Park, C. Baek, H. Park, S. Choi, Y. J. ParkVolume:
10
Year:
2011
Language:
english
DOI:
10.1109/TNANO.2010.2069103
File:
PDF, 1.44 MB
english, 2011